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| SUM18N25-165 Vishay Siliconix N-Channel 250-V (D-S) 175 C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 250 rDS(on) () 0.165 at VGS = 10 V ID (A) 18 FEATURES * TrenchFET(R) Power MOSFET * 175 C Junction Temperature * Low Thermal Resistance Package RoHS COMPLIANT D TO-263 G G DS S Top View Ordering Information: SUM18N25-165-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 C) Pulsed Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range a Symbol VDS VGS TC = 25 C TC = 125 C ID IDM IAS L = 0.1 mH TC = 25 C TA = 25 Cc EAS PD TJ, Tstg Limit 250 20 18 10.4 20 5 1.25 150b 3.75 - 55 to 175 Unit V A mJ W C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case (Drain) Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). Document Number: 72849 S-80272-Rev. B, 11-Feb-08 www.vishay.com 1 PCB Mount (TO-263)c Symbol RthJA RthJC Limit 40 1.0 Unit C/W SUM18N25-165 Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic b Symbol V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg c Test Conditions VDS = 0 V, ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 250 V, VGS = 0 V VDS = 250 V, VGS = 0 V, TJ = 125 C VDS = 250 V, VGS = 0 V, TJ = 175 C VDS 15 V, VGS = 10 V VGS = 10 V, ID = 14 A VGS = 10 V, ID = 14 A, TJ = 125 C VGS = 10 V, ID = 14 A, TJ = 175 C VDS = 15 V, ID = 18 A Min. 250 2.5 Typ. Max. Unit 4 100 1 50 250 V nA A A 20 0.130 0.165 0.347 0.462 36 S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Timec Turn-Off Delay Time Fall Timec Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Charge Reverse Recovery Charge c c 1950 VGS = 0 V, VDS = 25 V, f = 1 MHz 160 70 30 VDS = 125 V, VGS = 10 V, ID = 18 A 10 10 1.6 15 VDD = 125 V, RL = 7.0 ID 18 A, VGEN = 10 V, Rg = 2.5 130 30 100 25 195 45 150 18 20 IF = 18 A, VGS = 0 V IF = 18 A, di/dt = 100 A/s 1.0 115 10 0.58 1.5 175 15 1.3 ns 45 nC pF td(on) tr td(off) tf IS ISM VSD trr IRM(REC) Qrr Source-Drain Diode Ratings and Characteristics TC = 25 Cb A V ns A C Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72849 S-80272-Rev. B, 11-Feb-08 SUM18N25-165 Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 20 VGS = 10 thru 6 V 16 5V I D - Drain Current (A) 12 I D - Drain Current (A) 12 16 20 8 8 TC = 125 C 4 25 C - 55 C 0 4 4V 0 0 4 8 12 16 20 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 60 TC = - 55 C 50 r DS(on) - On-Resistance () g fs - Transconductance (S) 25 C 40 125 C 30 0.32 0.28 0.24 0.20 0.16 0.12 0.08 0.04 0 0 4 8 12 16 20 0.00 0 4 Transfer Characteristics VGS = 10 V 20 10 8 12 16 20 ID - Drain Current (A) ID - Drain Current (A) Transconductance 2800 20 On-Resistance vs. Drain Current VGS - Gate-to-Source Voltage (V) 16 2100 C - Capacitance (pF) VDS = 125 V ID = 17 A Ciss 12 1400 8 700 Crss Coss 0 0 40 80 120 160 200 4 0 0 8 16 24 32 40 48 56 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge Document Number: 72849 S-80272-Rev. B, 11-Feb-08 www.vishay.com 3 SUM18N25-165 Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2.8 VGS = 10 V ID = 18 A I S - Source Current (A) 100 2.4 rDS(on) - On-Resistance (Normalized) 2.0 TJ = 150 C 10 1.6 1.2 TJ = 25 C 0.8 0.4 - 50 1 - 25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 100 325 310 10 I Dav (A) 295 ID = 10 mA IAV (A) at TA = 25 C 1 V(BR)DSS (V) 280 0.1 265 IAV (A) at TA = 150 C 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 250 - 50 - 25 0 25 50 75 100 125 150 175 tin (s) TJ - Junction Temperature (C) Avalanche Current vs. Time Drain Source Breakdown vs. Junction Temperature www.vishay.com 4 Document Number: 72849 S-80272-Rev. B, 11-Feb-08 SUM18N25-165 Vishay Siliconix THERMAL RATINGS 20 100 16 I D - Drain Current (A) I D - Drain Current (A) 10 Limited by rDS(on)* 10 s 12 100 s 8 1 TC = 25 C Single Pulse 1 ms 10 ms 100 ms, DC 4 0 0 25 50 75 100 125 150 175 TC - Case Temperature (C) 0.1 0.1 * VGS 1 10 100 1000 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Maximum Drain Current vs. Case Temperature Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72849. Document Number: 72849 S-80272-Rev. B, 11-Feb-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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